Magnetic-Field Induced Strains in Ferromagnetic Shape Memory Alloy Ni55Mn23Ga22 Deposited by RF-Magnetron Sputtering

1.5 mu m-Ni55Mn23Ga22 ferromagnetic thin films were deposited onto silicon substrates and silicon single beam cantilever using radio-frequency magnetron sputtering. As-deposited sample and heat-treated thin films were studied on their silicon substrates and peeled off to determine the influence of the stress. Post-heat treatment process allows at the films to achieve the shape memory effect (SME). Vibrating sample magnetometer (VSM) and deflection measurement of the sample annealed at 873 K during 36 ks exhibit ferromagnetic martensitic structure with a typical SME response to the magnetic field induced strains which match the values of the bulk material.

Published in:
Plasma Processes And Polymers, 6, S822-S825
Presented at:
11th International Conference on Plasma Surface Engineering, Garmisch Partenkirchen, GERMANY, Sep 15-19, 2008

 Record created 2010-11-30, last modified 2018-03-17

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