Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate

We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.


Publié dans:
Physics Of Semiconductors, 1199, 471-472
Présenté à:
29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008
Année
2009
Publisher:
Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa
Mots-clefs:
Laboratoires:




 Notice créée le 2010-11-30, modifiée le 2018-03-17


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