Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009
Abstract
We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.
Details
Title
Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
Author(s)
Riester, S. W. E. ; Stolichnov, I. ; Trodahl, H. J. ; Setter, N. ; Rushforth, A. W. ; Edmonds, K. W. ; Campion, R. P. ; Foxon, C. T. ; Gallagher, B. L. ; Jungwirth, T.
Published in
Physics Of Semiconductors
Series
AIP Conference Proceedings, 1199
Pages
471-472
Conference
29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008
Date
2009
Publisher
Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa
Keywords
Other identifier(s)
View record in Web of Science
Laboratories
LC
Record Appears in
Scientific production and competences > STI - School of Engineering > STI Archives > LC - Ceramics Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-11-30