Journal article

Integration Of Leds And Gaas Circuits By Mbe Regrowth

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500-degrees-C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.

Related material


EPFL authors