Integration Of Leds And Gaas Circuits By Mbe Regrowth

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500-degrees-C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.


Published in:
Ieee Photonics Technology Letters, 6, 819-823
Year:
1994
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 Record created 2010-11-25, last modified 2018-01-28

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