Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs


Published in:
IEEE Transactions on Electron Devices, 54, 6, 1527-1539
Year:
2007
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Other identifiers:
Laboratories:




 Record created 2010-11-08, last modified 2018-04-20


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