Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
2007
Details
Title
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Author(s)
Boucart, K. ; Ionescu, A.
Published in
Solid-State Electronics
Volume
51
Issue
11-12
Pages
1500-1507
Date
2007
Publisher
Elsevier
ISSN
0038-1101
Other identifier(s)
View record in Web of Science
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Work produced at EPFL
Journal Articles
Published
Work produced at EPFL
Journal Articles
Published
Record creation date
2010-11-08