Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress


Published in:
2007 IEEE International Electron Devices Meeting, 191-194
Presented at:
2007 IEEE International Electron Devices Meeting, Washington, DC, USA, 10-12 December 2007
Year:
2007
Publisher:
IEEE
Laboratories:




 Record created 2010-11-08, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)