Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007
Details
Title
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
Author(s)
Moselund, K. E. ; Dobrosz, P. ; Olsen, S. ; Pott, V. ; De Michielis, L. ; Tsamados, D. ; Bouvet, D. ; O'Neill, A. ; Ionescu, A. M.
Published in
2007 IEEE International Electron Devices Meeting
Pages
191-194
Conference
2007 IEEE International Electron Devices Meeting, Washington, DC, USA, 10-12 December 2007
Date
2007
Publisher
IEEE
Laboratories
NANOLAB