Infoscience

Conference paper

Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Moselund, K. E.; Dobrosz, P.; Olsen, S.; Pott, V.; De Michielis, L.; Tsamados, D.; Bouvet, D.; O'Neill, A.; Ionescu, A. M.
  • Presented at: 2007 IEEE International Electron Devices Meeting, Washington, DC, USA, 10-12 December 2007
  • Published in: 2007 IEEE International Electron Devices Meeting, p. 191-194
  • IEEE, 2007

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