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Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Moselund, K. E. ; Dobrosz, P. ; Olsen, S. ; Pott, V.[...]

Published in:
2007 IEEE International Electron Devices Meeting, 191-194
Presented at:
2007 IEEE International Electron Devices Meeting, Washington, DC, USA, 10-12 December 2007
Year:
2007
Publisher:
IEEE
DOI:
10.1109/IEDM.2007.4418899
Laboratories:
NANOLAB

Record appears in:
Scientific production and competences > STI - School of Engineering > IEL - Institute of Electrical Engineering > NANOLAB - Nanoelectronic Devices Laboratory
Conference Papers
Work produced at EPFL
Published



 Record created 2010-11-08, last modified 2018-03-17


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