Sub-100μW low power operation of vibrating body FETs

This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100μW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks. ©2009 IEEE.


Published in:
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, null, null, 129-130
Presented at:
International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009
Year:
2009
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Laboratories:




 Record created 2010-11-08, last modified 2018-03-17


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