Self-sustained low power oscillator based on vibrating body field effect transistor

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near mechanical pull-in. This is probably the first known demonstration of inherent oscillation capability in a MEM resonator, expected to provide a significant contribution towards the study of low power, high stability reference source design for compact timing and communications applications. We report selfsustained VB-FET oscillators that generate 3 to 4 MHz AC signals when powered by a steady DC source with power consumption levels between 70 μW an 1 mW when VD is varied from 0.4V to 2V. A detailed study of the drain and gate influences on self-oscillations and noise filtering is proposed. Further scaling of such devices is expected to offer practical solutions for sub-1μW integrated oscillators. © 2009 IEEE.

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Technical Digest - International Electron Devices Meeting, IEDM, null, null, 33.3.1-33.3.4

 Record created 2010-11-08, last modified 2018-03-17

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