A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections

In this work a quasi-analytical physical model for the accurate prediction of the potential of GAA nanowire transistors with an arbitrary regular polygon as a cross section is developed. Two case studies concerning triangular and square cross-sections are particularly investigated and analyzed. The model is then extended to the transport direction; general expressions for the natural length are derived and validated by means of two- and three-dimensional numerical device simulations. Basic design guidelines, using an original analytical expression of the natural length, for robust electrostatic design are proposed, to predict the minimum technological gate length able to assure immunity to the SeEs. ©2009 IEEE.

Published in:
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, null, null, 472-475

 Record created 2010-11-08, last modified 2018-03-17

Rate this document:

Rate this document:
(Not yet reviewed)