This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lowering the Schottky Barrier Height (SBH). The series resistance and the barrier have been extracted using an external series resistance method and Arrhenius plots, respectively. Series resistances as low as 400Ω.μm for VG>VT and SBH of 0.1eV at VG=VT, are reported Finally, this paper points our the correlation of RT(VG) and ΦB(VG) in DG Schottky MOSFETs and the importance of the simultaneous extraction and modeling. © 2009 IEEE.