Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lowering the Schottky Barrier Height (SBH). The series resistance and the barrier have been extracted using an external series resistance method and Arrhenius plots, respectively. Series resistances as low as 400 m for V-G>V-T and SBH of 0.1eV at V-G=V-T, are reported Finally, this paper points our the correlation of R-T(V-G) and Phi(B)(V-G) in DG Schottky MOSFETs and the importance of the simultaneous extraction and modeling.

Published in:
2009 IEEE International Soi Conference, 131-132
Presented at:
IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009
Piscataway, NJ, IEEE

 Record created 2010-11-08, last modified 2018-01-28

Rate this document:

Rate this document:
(Not yet reviewed)