Micro-electro-mechanical (MEM) diode switch

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by the electromechanical bi-stability of the structure. Electromechanical pull-in and pull-out events define a hysteresis window that can be exploited in the future for memory applications, if the device scaling and charging problems are properly addressed. Ultra low leakage currents in the off state due to in-series air-gap (similar to 10 fA for 10 x 20 mu m(2)) and quasi-exponential on-current characteristics have been measured for devices with different spring constants. (C) 2009 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 86, 4-6, 1074-1077
Year:
2009
Publisher:
Elsevier
ISSN:
0167-9317
Keywords:
Laboratories:




 Record created 2010-11-08, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)