Automatic calibration of Hall sensor microsystems

In many applications, a Hall element is used for contact-less measurement such as linear and angular positions, electrical current, power and energy, etc. The Hall element fabricated by means of CMOS technology features mediocre characteristics [R.S. Popovic, Z. Randjelovic, D. Manic, Integrated Hall-Effect Magnetic Sensors, EMSA, Germany, 2000; R.S. Popovic, Hall Effect Devices, Adam Hilger, Bristol, Philadelphia, New York, 1991]. It gives a weak output signal of the order of a few mV. This signal is often corrupted by sensor offset, noise, temperature and aging drift. This paper deals with the state of the art and main techniques capable to detect and compensate these issues. Case studies using mentioned techniques are also summarized. (c) 2006 Elsevier Ltd. All rights reserved.


Published in:
Microelectronics Journal, 37, 12, 1569-1575
Year:
2006
ISSN:
0026-2692
Note:
Times Cited: 0
6th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)
Apr 03-05, 2006
Univ Nottingham, Nottingham, ENGLAND
Laboratories:




 Record created 2010-10-21, last modified 2018-03-17


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