Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of tight. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m(2) were measured.


Published in:
Essderc 2007: Proceedings of the 37th European Solid-State Device Research Conference, 366-369
Year:
2007
ISSN:
1930-8876
Note:
Times Cited: 0
SchmittLandsiedel, D Thewes, R
37th European Solid-State Device Research Conference
Sep 11-13, 2007
Technische Univ Munchen, Munich, GERMANY
Laboratories:




 Record created 2010-10-21, last modified 2018-03-17


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