In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOl MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has sensitivity of 3mW1m2 and a resolution of about 7bits. This pixel can be operated in two modes: Weak inversion (Idc =1.2μA) and moderate inversion (Idc =15μA).
Titre
SOI digital pixel sensor based on charge pumping
Publié dans
2009 3Rd International Workshop On Advances In Sensors And Interfaces
Pages
98-103
Présenté à
3rd International Workshop on Advances in Sensors and Interfaces, Trani, ITALY, Jun 25-26, 2009
Date
2009
Editeur
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN
978-1-4244-4708-4
Note
Electrical Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 5184778
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Date de création de la notice
2010-10-21
