000153527 001__ 153527
000153527 005__ 20190812205438.0
000153527 0247_ $$2doi$$a10.1109/IWASI.2009.5184778
000153527 020__ $$a978-1-4244-4708-4
000153527 02470 $$2ISI$$a000270759000019
000153527 02470 $$2Scopus$$a2-s2.0-70449450482
000153527 037__ $$aCONF
000153527 245__ $$aSOI digital pixel sensor based on charge pumping
000153527 260__ $$bIEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa$$c2009
000153527 269__ $$a2009
000153527 336__ $$aConference Papers
000153527 500__ $$aElectrical Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
000153527 500__ $$aExport Date: 19 January 2010
000153527 500__ $$aSource: Scopus
000153527 500__ $$aArt. No.: 5184778
000153527 500__ $$aReferences: Harik, L., Sallese, J-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD Sol MOSFET (2008) Solid-State Electronics, 52, pp. 597-605. , May; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOl ISSCC 2001, , Session 11 SRAM 11.5; Blagojevic, M., Kayal, M., Pastre, M., Harik, L., Declercq, M.J., Okhonin, S., Fazan, P.C., Capacitorless IT DRAM sensing scheme with automatic reference generation (2006) Solid-State Circuits, IEEE Journal, 41 (6), pp. 1463-1470. , June; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., Oversampling delta-sigma data converters (1992) IEEE Press; J-M., Sallese., A-S. Porret, A novel approach to charge-based nonquasi- static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44 (6), pp. 887-894; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
000153527 520__ $$aAbstract-In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOl MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has sensitivity of 3mW1m2 and a resolution of about 7bits. This pixel can be operated in two modes: Weak inversion (Idc =1.2μA) and moderate inversion (Idc =15μA).
000153527 6531_ $$aModel
000153527 700__ $$aHarik, L.
000153527 700__ $$0241224$$g106334$$aSallese, Jean-Michel
000153527 700__ $$0240539$$aKayal, M.$$g105540
000153527 7112_ $$dJun 25-26, 2009$$cTrani, ITALY$$a3rd International Workshop on Advances in Sensors and Interfaces
000153527 773__ $$t2009 3Rd International Workshop On Advances In Sensors And Interfaces$$q98-103
000153527 909C0 $$xU11978$$pELAB$$0252315
000153527 909C0 $$pEDLAB$$0252605
000153527 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:153527
000153527 917Z8 $$x144315
000153527 937__ $$aEPFL-CONF-153527
000153527 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000153527 980__ $$aCONF