SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Standard techniques used for measuring the photocurrent of an SOI phototransistor have failed due to two main reasons: the first being the low signal-to-noise ratio and the second being the slow transient. In this paper, the partially depleted silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a light intensity sensor. Using a novel technique of measurement enables us to embed this phototransistor in the delta-sigma loop. The presented circuits implement a first-order delta-sigma modulator with limited number of transistors maximizing the fill factor. Measured data show that the implemented pixels were sensitive to flux densities as low as 3 mW/m(2) with a resolution of 7.5 bits.


Published in:
IEEE Sensors Journal, 9, 8, 994-1001
Year:
2009
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1530-437X
Keywords:
Note:
Times Cited: 0
Sensors Conference 2008
2008
Lecce, ITALY
Laboratories:




 Record created 2010-10-21, last modified 2018-03-17


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