Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector
2008
Abstract
In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.
Details
Title
Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector
Author(s)
Harik, L. ; Sallese, Jean-Michel ; Kayal, M.
Published in
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Pages
366-369
Date
2008
Note
Electrical Engineering, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4430954
References: Gamai, A.E., Eltoukhy, H., An introduction to the technology, design and performance limits, presenting recent developments and future directions (2005) IEEE Circuits and Devices, , May-June; Fossum, E., CMOS imager sensors: Electronic camera-on-a-chip (1997) IEEE transactions on Electron Devices, 44, p. 10; Sandage, R., Connelly, J., A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process (1995) IEDM technical digest, pp. 171-174; Yamamoto, H., Taniguchi, K., Hamaguchi, C., High-sensitivity SOI MOS photodetector with self-amplification (1996) Journal of Applied Physics, 35, pp. 1382-1386; Zhang, W., Chan, M., Fung, S., Ko, P., Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate (1998) Electron Device Letters, 19, pp. 435-437; Parke, S., Assaderaghi, F., Chen, J., King, J., Hu, C., Ko, P., A versatile,SOI BICMOS technology with complementary lateral BJT (1992) IEDM technical digest, pp. 453-456; Parke, S., Hu, C., Ko, P., Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET Electron Device Letter, 14, pp. 234-236. , 199, pp; Shen, C., Xu, C., Hang, R., Ko, P., Chan, M., Improved SOI image sensor design based on backside illumination on silcon on saphire(SoS) substrate in 2002 (2002) IEEE SOI International Conference, pp. 73-74. , October; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May; Zhang, W., Chan, M., Ko, P.K., Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate (2000) IEEE Transactions on Electron Devices, 47 (7), pp. 1375-1384. , July; Sallese, J.-M., Krummenacher, F., Fazan, P., Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET'S channels valid in all modes of operation (2004) Solid State Electronics, 48, pp. 1539-1548; Heremans, P., Witters, J., Groeseneken, G., Maes, H.E., Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (1989) IEEE Transactions on Electron Devices, 36 (7), pp. 1318-1335. , July; Sallese, J.-M., Porret, A.-S., A novel approach to charge-based nonquasi-static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44, pp. 887-894; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4430954
References: Gamai, A.E., Eltoukhy, H., An introduction to the technology, design and performance limits, presenting recent developments and future directions (2005) IEEE Circuits and Devices, , May-June; Fossum, E., CMOS imager sensors: Electronic camera-on-a-chip (1997) IEEE transactions on Electron Devices, 44, p. 10; Sandage, R., Connelly, J., A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process (1995) IEDM technical digest, pp. 171-174; Yamamoto, H., Taniguchi, K., Hamaguchi, C., High-sensitivity SOI MOS photodetector with self-amplification (1996) Journal of Applied Physics, 35, pp. 1382-1386; Zhang, W., Chan, M., Fung, S., Ko, P., Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate (1998) Electron Device Letters, 19, pp. 435-437; Parke, S., Assaderaghi, F., Chen, J., King, J., Hu, C., Ko, P., A versatile,SOI BICMOS technology with complementary lateral BJT (1992) IEDM technical digest, pp. 453-456; Parke, S., Hu, C., Ko, P., Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET Electron Device Letter, 14, pp. 234-236. , 199, pp; Shen, C., Xu, C., Hang, R., Ko, P., Chan, M., Improved SOI image sensor design based on backside illumination on silcon on saphire(SoS) substrate in 2002 (2002) IEEE SOI International Conference, pp. 73-74. , October; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May; Zhang, W., Chan, M., Ko, P.K., Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate (2000) IEEE Transactions on Electron Devices, 47 (7), pp. 1375-1384. , July; Sallese, J.-M., Krummenacher, F., Fazan, P., Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET'S channels valid in all modes of operation (2004) Solid State Electronics, 48, pp. 1539-1548; Heremans, P., Witters, J., Groeseneken, G., Maes, H.E., Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (1989) IEEE Transactions on Electron Devices, 36 (7), pp. 1318-1335. , July; Sallese, J.-M., Porret, A.-S., A novel approach to charge-based nonquasi-static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44, pp. 887-894; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
Other identifier(s)
View record in Scopus
View record in Web of Science
View record in Web of Science
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > ELAB - Electronics Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > ELAB - Electronics Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-10-21