Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.

Published in:
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, 366-369
Electrical Engineering, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4430954
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Other identifiers:
Scopus: 2-s2.0-39549115003

 Record created 2010-10-21, last modified 2019-08-12

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