Conference paper

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.


    Electrical Engineering, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland

    Export Date: 19 January 2010

    Source: Scopus

    Art. No.: 4430954

    References: Gamai, A.E., Eltoukhy, H., An introduction to the technology, design and performance limits, presenting recent developments and future directions (2005) IEEE Circuits and Devices, , May-June; Fossum, E., CMOS imager sensors: Electronic camera-on-a-chip (1997) IEEE transactions on Electron Devices, 44, p. 10; Sandage, R., Connelly, J., A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process (1995) IEDM technical digest, pp. 171-174; Yamamoto, H., Taniguchi, K., Hamaguchi, C., High-sensitivity SOI MOS photodetector with self-amplification (1996) Journal of Applied Physics, 35, pp. 1382-1386; Zhang, W., Chan, M., Fung, S., Ko, P., Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate (1998) Electron Device Letters, 19, pp. 435-437; Parke, S., Assaderaghi, F., Chen, J., King, J., Hu, C., Ko, P., A versatile,SOI BICMOS technology with complementary lateral BJT (1992) IEDM technical digest, pp. 453-456; Parke, S., Hu, C., Ko, P., Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET Electron Device Letter, 14, pp. 234-236. , 199, pp; Shen, C., Xu, C., Hang, R., Ko, P., Chan, M., Improved SOI image sensor design based on backside illumination on silcon on saphire(SoS) substrate in 2002 (2002) IEEE SOI International Conference, pp. 73-74. , October; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May; Zhang, W., Chan, M., Ko, P.K., Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate (2000) IEEE Transactions on Electron Devices, 47 (7), pp. 1375-1384. , July; Sallese, J.-M., Krummenacher, F., Fazan, P., Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET'S channels valid in all modes of operation (2004) Solid State Electronics, 48, pp. 1539-1548; Heremans, P., Witters, J., Groeseneken, G., Maes, H.E., Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (1989) IEEE Transactions on Electron Devices, 36 (7), pp. 1318-1335. , July; Sallese, J.-M., Porret, A.-S., A novel approach to charge-based nonquasi-static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44, pp. 887-894; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683


    Record created on 2010-10-21, modified on 2017-06-01


Related material