Infoscience

Conference paper

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.

    Note:

    Electrical Engineering, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland

    Export Date: 19 January 2010

    Source: Scopus

    Art. No.: 4430954

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    Record created on 2010-10-21, modified on 2016-08-08

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