Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a constant value. This new approach contrasts with conventional techniques that rely on an accurate drain current evaluation. According to our measurements, flux densities as low as 2 mW/m2 were obtained using a regular SOI MOSFET, thus confirming the potentials of this approach. © 2007 Elsevier Ltd. All rights reserved.

Published in:
Solid-State Electronics, 52, 5, 597-605
Ecole Ploytechnique Fédérale de Lausanne, Electronics Laboratory (LEG), EPFL-STI-IMM LEG1, ELB 331, Station 11, 1015 Lausanne, Vaud, Switzerland
Cited By (since 1996): 2
Export Date: 19 January 2010
Source: Scopus
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