Delta-sigma loop based on charge pumping in SOI optical sensor
2008
Résumé
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.
Détails
Titre
Delta-sigma loop based on charge pumping in SOI optical sensor
Auteur(s)
Harik, L. ; Sallese, Jean-Michel ; Kayal, M.
Publié dans
Proceedings of IEEE Sensors
Pages
1382-1385
Date
2008
Note
Electrical Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4716704
References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET (2008) Solid-State Electronics, 52, pp. 597-605; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI (2001) ISSCC, , Session 11 SRAM 11.5; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., (1992) Oversampling Delta-Sigma Data Converters, , IEEE Press; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4716704
References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET (2008) Solid-State Electronics, 52, pp. 597-605; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI (2001) ISSCC, , Session 11 SRAM 11.5; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., (1992) Oversampling Delta-Sigma Data Converters, , IEEE Press; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
Autres identifiant(s)
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Le document apparaît dans
Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > IEM - Institute of Electrical and Micro Engineering > EDLAB - Group of Electron Device Modeling and Technology
Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > IEM - Institute of Electrical and Micro Engineering > ELAB - Electronics Laboratory
Publications validées par des pairs
Papiers de conférence
Travail produit à l'EPFL
Publié
Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > IEM - Institute of Electrical and Micro Engineering > ELAB - Electronics Laboratory
Publications validées par des pairs
Papiers de conférence
Travail produit à l'EPFL
Publié
Date de création de la notice
2010-10-21