000153523 001__ 153523
000153523 005__ 20190812205438.0
000153523 0247_ $$a10.1109/ICSENS.2008.4716704$$2doi
000153523 02470 $$a2-s2.0-67649921566$$2Scopus
000153523 037__ $$aCONF
000153523 245__ $$aDelta-sigma loop based on charge pumping in SOI optical sensor
000153523 269__ $$a2008
000153523 260__ $$c2008
000153523 336__ $$aConference Papers
000153523 500__ $$aElectrical Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
000153523 500__ $$aExport Date: 19 January 2010
000153523 500__ $$aSource: Scopus
000153523 500__ $$aArt. No.: 4716704
000153523 500__ $$aReferences: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET (2008) Solid-State Electronics, 52, pp. 597-605; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI (2001) ISSCC, , Session 11 SRAM 11.5; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., (1992) Oversampling Delta-Sigma Data Converters, , IEEE Press; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
000153523 520__ $$aIn this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.
000153523 700__ $$aHarik, L.
000153523 700__ $$g106334$$aSallese, Jean-Michel$$0241224
000153523 700__ $$g105540$$aKayal, M.$$0240539
000153523 773__ $$tProceedings of IEEE Sensors$$q1382-1385
000153523 909C0 $$xU11978$$pELAB$$0252315
000153523 909C0 $$pEDLAB$$0252605
000153523 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:153523
000153523 917Z8 $$x144315
000153523 937__ $$aEPFL-CONF-153523
000153523 973__ $$sPUBLISHED$$rREVIEWED$$aEPFL
000153523 980__ $$aCONF