In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.
Titre
Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop
Publié dans
Proceedings of the IEEE International SOI Conference, 2008. SOI.
Pages
91-92
Présenté à
SOI Conference, 2008. SOI. IEEE International, New Paltz, NY, USA, October 6-9, 2008
Date
2008
ISBN
978-1-4244-1954-8
Note
Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4656309, References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Solid-State Electronics, , available online, in Press; J M. Hill and J. Lachman, A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI, in ISSCC 2001, Session 11 SRAM 11.5Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May
Date de création de la notice
2010-10-21
