Conference paper

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.

    Keywords: MOSFET ; delta-sigma modulation ; optical sensors ; phototransistors ; silicon-on-insulator


    Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4656309, References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Solid-State Electronics, , available online, in Press; J M. Hill and J. Lachman, A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI, in ISSCC 2001, Session 11 SRAM 11.5Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May


    Record created on 2010-10-21, modified on 2016-08-08


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