000153520 001__ 153520
000153520 005__ 20190812205438.0
000153520 020__ $$a978-1-4244-1262-4
000153520 0247_ $$2doi$$a10.1109/ICSENS.2007.4388465
000153520 037__ $$aCONF
000153520 245__ $$aElectrical model of a single pixel SOI phototransistor relying on the transient charge pumping technique
000153520 269__ $$a2007
000153520 260__ $$c2007
000153520 336__ $$aConference Papers
000153520 500__ $$aIMM-STI- Electrical Department, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4388465, References: Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May; Gamal, A.E., Eltoukhy, H., An introduction to the technology, design and performance limits, presenting recent developments and future directions (2005) IEEE Circuits and Devices, , May-June; Yamamoto, H., Taniguchi, K., Hamaguchi, C., High-sensitivity SOI MOS photodetector with self-amplification (1996) Journal of Applied Physics, 35, pp. 1382-1386; Zhang, W., Chan, M., Ko, P.K., Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate (2000) IEEE Transactions on Electron Devices, 47 (7), p. 1375. , July; Saliese, J.-M., Porret, A.-S., A novel approach to oharge-based non-quasi-static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44, pp. 887-894; L. Harik, J-M. Saliese and M. Kayal, Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector to be published in ESSDERC September 2007Heremans, P., Witters, J., Groeseneken, G., Maes, H.E., Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (1989) IEEE Transactions on Electron Devices, 36 (7), pp. 1318-1335. , July
000153520 520__ $$aIn this paper a floating body partially depleted SOI MOSFET used to measure light intensity using the transient charge pumping [1] is modeled through an equivalent electrical circuit. Essentially, photogenerated charges of the MOSFET are converted into a charge pumping frequency needed to maintain the drain current constant during the illumination. This contrasts with other conventional methods that rely on an accurate quantification of the drain current to measure the light intensity. Flux densities as low as 2mW/m2 were measured, thus confirming the potential of this approach. © 2007 IEEE.
000153520 6531_ $$aMOSFET
000153520 6531_ $$aequivalent circuits
000153520 6531_ $$aphototransistors
000153520 6531_ $$asilicon-on-insulator
000153520 700__ $$aHarik, L.
000153520 700__ $$0240539$$g105540$$aKayal, M.
000153520 700__ $$0241224$$aSallese, Jean-Michel$$g106334
000153520 7112_ $$dOctober 28-31, 2007$$cAtlanta, GA, USA$$aSensors, 2007 IEEE
000153520 773__ $$tProceedings of the IEEE Sensors, 2007$$q581-584
000153520 8564_ $$zURL$$uhttp://tinyurl.com/2v4zacc
000153520 909C0 $$xU11978$$pELAB$$0252315
000153520 909C0 $$0252605$$pEDLAB
000153520 909CO $$qGLOBAL_SET$$pconf$$pSTI$$ooai:infoscience.tind.io:153520
000153520 917Z8 $$x198375
000153520 917Z8 $$x144315
000153520 937__ $$aEPFL-CONF-153520
000153520 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000153520 980__ $$aCONF