000153513 001__ 153513
000153513 005__ 20190812205438.0
000153513 02470 $$2ISI$$a000178854400003
000153513 037__ $$aCONF
000153513 245__ $$aCapacitor-less 1-Transistor DRAM
000153513 269__ $$a2002
000153513 260__ $$c2002
000153513 336__ $$aConference Papers
000153513 500__ $$aTimes Cited: 1
000153513 500__ $$aIEEE International SOI Conference
000153513 500__ $$aOct 07-10, 2002
000153513 500__ $$aWilliamsburg, va
000153513 700__ $$aFazan, P.
000153513 700__ $$aOkhonin, S.
000153513 700__ $$aNagoga, M.
000153513 700__ $$0241224$$g106334$$aSallese, Jean-Michel
000153513 700__ $$aPortmann, L.
000153513 700__ $$aFerrant, R.
000153513 700__ $$0240539$$g105540$$aKayal, M.
000153513 700__ $$0244585$$g111342$$aPastre, M.
000153513 700__ $$aBlagojevic, M.
000153513 700__ $$aBorschberg, A.
000153513 700__ $$aDeclercq, M.
000153513 773__ $$t2002 IEEE International Soi Conference, Proceedings$$q10-13
000153513 909C0 $$xU11978$$pELAB$$0252315
000153513 909C0 $$pEDLAB$$0252605
000153513 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:153513
000153513 917Z8 $$x144315
000153513 937__ $$aEPFL-ARTICLE-153513
000153513 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000153513 980__ $$aCONF