000153512 001__ 153512
000153512 005__ 20181203022039.0
000153512 0247_ $$2doi$$a10.1016/S0026-2692(02)00008-3
000153512 022__ $$a0026-2692
000153512 02470 $$2ISI$$a000175704100001
000153512 037__ $$aARTICLE
000153512 245__ $$aFault detection in CMOS/SOI mixed-signal circuits using the quiescent current test
000153512 269__ $$a2002
000153512 260__ $$c2002
000153512 336__ $$aJournal Articles
000153512 500__ $$aTimes Cited: 1
000153512 520__ $$aMain stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted CMOS/SOI compared to bulk CMOS allows quiescent current testing also for high performance analogue circuits at an acceptable defect resolutions. From first simulations and technological considerations, it turned out that quiescent current tests are able to detect not only commonly known defects, but also SOI specific defects such as self-heating, kink-effect or the parasitic bipolar behaviour. It is further shown that in partially depleted thick-film SOL the kink-effect and parasitic bipolar transistor support the quiescent current test for some specific defects as they elevate the defective quiescent current level. In fully depleted kink-free SOI circuits, the kink-effect may occur due to process failures but then can be detected by quiescent current tests. A special fault simulation model for the kink-effect is presented. The I-ccq test technique is studied for a CMOS/SOI Miller operational amplifier. Normal 6-sigma variation of the aspect ratio and the threshold voltage do not jeopardise the defect detection in the quiescent current. First, results confirm the good detection capabilities of the quiescent current test, in particular, of failures which are not visible in the output voltage. (C) 2002 Elsevier Science Ltd. All rights reserved.
000153512 700__ $$aDe Venuto, D.
000153512 700__ $$0240539$$g105540$$aKayal, M.
000153512 700__ $$aOhletz, M. J.
000153512 773__ $$j33$$tMicroelectronics Journal$$k5-6$$q387-397
000153512 909C0 $$xU11978$$0252315$$pELAB
000153512 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:153512
000153512 937__ $$aEPFL-ARTICLE-153512
000153512 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000153512 980__ $$aARTICLE