A frequency-tunable impedance matching network based on coupled inductors for RF power amplifiers
In this paper we present an RF PA employing an output impedance matching network of the pi-type, where an inductor is variable. In order to implement this tunable inductor, the coupled-inductor technique  is used. Although other techniques for inductor tuning exist, like those using active  and MEMS inductors, and p-i-n diodes , the coupled-inductor technique is the only providing quality factor (Q) enhancement and tunable capability.
Electronics Laboratory (LEG), EPFL, Lausanne, Switzerland Fujitsu Laboratories Ltd., Kawasaki, Japan, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4958476, References: Pehlke, D.R., Burstein, A., Chang, M.F., Extremely high-Q tunable inductor for Si-based RF integrated circuit applications (1997) IEEE IEDM Tech. Dig., pp. 63-66. , Dec; Mukhopadhyay, R., Park, Y., Lee, C.-H., Nuttinck, S., Laskar, J., Frequency-agile CMOS RFICs for multi-mode RF front-end (2004) Proc. European Conf. Wireless Technol., pp. 9-12. , Oct; Zhang, H., Gao, H., Li, G.-P., Broad-band power amplifier with a novel tunable output matching network (2005) IEEE Trans. Microw. Theory Tech., 53 (11), pp. 3606-3614. , Nov; Dal Fabbro, P.A., Meinen, C., Kayal, M., Kobayashi, K., Watanabe, Y., A dynamic supply CMOS RF power amplifier for 2.4 GHz and 5.2 GHz frequency bands (2006) IEEE RFIC Symp. Dig. Papers, pp. 169-172. , June; Long, J.R., Monolithic transformers for silicon RF IC design (2000) IEEE J. Solid-State Circuits, 35 (9), pp. 1368-1382. , Sep
Record created on 2010-10-21, modified on 2016-08-08