FD SOI Hall sensor electronics interfaces for energy measurement

This paper presents a SOI Hall sensor based microsystem for energy measurement. The mixed-mode signal circuitry has been entirely designed and integrated in the experimental 0.5 mu m fully depleted SOI 3 V technology. It consists of an integrated Hall element, chopper stabilized sensor bias system, analog front end and digital back end. Aiming at performing accurate measurements, we have implemented a high linearity analog front end, as well as a high-resolution analog-to-digital conversion technique. Two versions of the microsystem have been realized. The first test chip contains a classical instrumentation amplifier as sensor amplifier, whereas the second one contains a linearized differential-difference amplifier as sensor amplifier. Both microsystems are fully functional and permits one to perform the measurements with an overall system error that is less than 1.5%. (c) 2006 Elsevier Ltd. All rights reserved.


Published in:
Microelectronics Journal, 37, 12, 1576-1583
Year:
2006
ISSN:
0026-2692
Note:
Times Cited: 0
6th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)
Apr 03-05, 2006
Univ Nottingham, Nottingham, ENGLAND
Laboratories:




 Record created 2010-10-21, last modified 2018-09-13


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