Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.


Published in:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000754-000758
Year:
2009
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Keywords:
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 Record created 2010-10-18, last modified 2018-09-13


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