Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. Method for preparing this layer. Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
Titre
Couche mince semi-conductrice de GaInN, son procédé de préparation, diode électroluminescente comprenant cette couche et dispositif d'éclairage = Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
Date
2003
Note
French patent N°0004683
Alternative title(s) :
(de) Herstellungsverfahren einer halbleiter-dünnschicht aus gainn
(fr) Procede de preparation d'une couche mince semi-conductrice de gainn
(en) Method for preparing a thin semiconductor gainn layer
Autres identifiant(s)
EPO Family ID: 8849163
Date de création de la notice
2010-10-14