Couche mince semi-conductrice de GaInN, son procédé de préparation, diode électroluminescente comprenant cette couche et dispositif d'éclairage = Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device


Year:
2003
Note:
French patent N°0004683
Other identifiers:
EPO Family ID: 8849163
Patent number(s):
Laboratories:




 Record created 2010-10-14, last modified 2018-09-13


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