A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.
Title
Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
Date
2002
Note
Alternative title(s) :
(en) Stacking of gan or gainn quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
Other identifier(s)
EPO Family ID: 24544686
Record creation date
2010-10-14
