Effect of the nitridation of the sapphire (0001) substrate on the GaN growth

The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigated by transmission electron microscopy (TEM). GaN crystallites of high structural quality, with the c axis perpendicular to the sapphire basal plane, are observed when the starting surface is nitridated. On the other hand, the growth of GaN on a bare substrate involves the formation of larger islands with numerous defects, TEM study reveals that the c axis of these latter crystallites is systematically tilted by about 19 degrees with respect to the sapphire basal plane. Actually, this orientation corresponds to a particular epitaxial relationship between GaN and sapphire (0001) substrates. Finally, the optical properties of GaN thin layers are shown to be strongly dependent on the nitridation state of the sapphire surface.

Published in:
Iii-V Nitrides, 449, 67-72
Presented at:
Symposium on III-V Nitrides, BOSTON, MA, Dec 02-06, 1996
Materials Research Society

 Record created 2010-10-13, last modified 2018-03-17

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