AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances

Semond, F.; Lorenzini, P.; Grandjean, N.; Natali, F.; Damilano, B.; Massies, J.; Hoel, V.; Minko, A.; Vellas, N.; Gaquiere, C.; DeJaeger, J. C.; Dessertene, B.; Cassette, S.; Surrugue, M.; Adam, D.; Grattepain, J. C.; Delage, S. L.; Cordier, Y.

doi:10.1002/pssc.200390117

Semond, F.; Lorenzini, P.; Grandjean, N.; Natali, F.; Damilano, B.; Massies, J.; Hoel, V.; Minko, A.; Vellas, N.; Gaquiere, C.; DeJaeger, J. C.; Dessertene, B.; Cassette, S.; Surrugue, M.; Adam, D.; Grattepain, J. C.; Delage, S. L.; Cordier, Y.

2002

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Abstract

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.