AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances
2002
Abstract
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.
Details
Title
AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances
Author(s)
Semond, F. ; Lorenzini, P. ; Grandjean, N. ; Natali, F. ; Damilano, B. ; Massies, J. ; Hoel, V. ; Minko, A. ; Vellas, N. ; Gaquiere, C. ; DeJaeger, J. C. ; Dessertene, B. ; Cassette, S. ; Surrugue, M. ; Adam, D. ; Grattepain, J. C. ; Delage, S. L. ; Cordier, Y.
Published in
International Workshop On Nitride Semiconductors, Proceedings
Pages
61-64
Conference
International Workshop on Nitride Semiconductors (IWN 2002), AACHEN, GERMANY, Jul 22-25, 2002
Date
2002
Publisher
VCH Publishers
Keywords
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Record creation date
2010-10-13