AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.


Published in:
International Workshop On Nitride Semiconductors, Proceedings, 61-64
Presented at:
International Workshop on Nitride Semiconductors (IWN 2002), AACHEN, GERMANY, Jul 22-25, 2002
Year:
2002
Publisher:
VCH Publishers
Keywords:
Laboratories:




 Record created 2010-10-13, last modified 2018-01-28


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