Infoscience

Conference paper

Phonons and holes in magnesium doped GaN

P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole gas with the axial A(1)(LO) or planar E-1(LO) phonon modes, evidenced by Raman scattering: the observed coupled phonon-plasmon mode is found very different from the corresponding one evidenced in silicon doped (n type) GaN. We compare the experimental data with the lineshape calculated within a dielectric model, using the results of electrical measurements. These results are also compared with infrared reflectivity spectra.

    Reference

    • EPFL-CONF-153184

    Record created on 2010-10-13, modified on 2016-08-08

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