Phonons and holes in magnesium doped GaN

P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole gas with the axial A(1)(LO) or planar E-1(LO) phonon modes, evidenced by Raman scattering: the observed coupled phonon-plasmon mode is found very different from the corresponding one evidenced in silicon doped (n type) GaN. We compare the experimental data with the lineshape calculated within a dielectric model, using the results of electrical measurements. These results are also compared with infrared reflectivity spectra.


Published in:
Wide-Bandgap Semiconductors For High Power, High Frequency And High Temperature, 512, 333-338
Presented at:
Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, SAN FRANCISCO, CA, Apr 13-15, 1998
Year:
1998
Publisher:
Materials Research Society
Laboratories:




 Record created 2010-10-13, last modified 2018-09-13


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