000153178 001__ 153178
000153178 005__ 20180913060010.0
000153178 0247_ $$2doi$$a10.1002/pssc.200303270
000153178 037__ $$aCONF
000153178 245__ $$aOptical properties of GaN/AlN quantum boxes under high photo-excitation
000153178 269__ $$a2003
000153178 260__ $$bWiley-Vch$$c2003
000153178 336__ $$aConference Papers
000153178 520__ $$aPiezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transition energy. The TRPL measurements reveal a very large blue-shift (0.6 eV) of the PL peak energy, which reduces with time delay in a complex way, due to the strong transition-energy dependence of the carrier recombination time. The results are discussed in terms of respective roles played by the population of excited levels and by the screening of internal electric fields by accumulation of electron-hole dipoles in the quantum boxes. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
000153178 6531_ $$aDots
000153178 700__ $$aBretagnon, T.
000153178 700__ $$aLefebvre, P.
000153178 700__ $$aJuillaguet, S.
000153178 700__ $$aTaliercio, T.
000153178 700__ $$aValvin, P.
000153178 700__ $$aGil, B.
000153178 700__ $$0244550$$aGrandjean, N.$$g161577
000153178 700__ $$0244541$$aDussaigne, A.$$g174864
000153178 700__ $$aDamilano, B.
000153178 700__ $$aMassies, J.
000153178 700__ $$aKalliakos, S.
000153178 7112_ $$a5th International Conference on Nitride Semiconductors (ICNS-5)$$cNARA, JAPAN$$dMay 25-30, 2003
000153178 773__ $$q2666-2669$$t5Th International Conference On Nitride Semiconductors (Icns-5), Proceedings
000153178 909C0 $$0252312$$pLASPE$$xU10946
000153178 909CO $$ooai:infoscience.tind.io:153178$$pconf$$pSB
000153178 917Z8 $$x173008
000153178 937__ $$aEPFL-CONF-153178
000153178 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000153178 980__ $$aCONF