Modification of InGaN quantum well luminescence by microstructured buffer layers

Bonetti, Yargo C.; Graf, Marcel; Hofstetter, Daniel; Carlin, Jean-Francois; Ganiere, Jean-Daniel; Grandjean, Nicolas

doi:10.1063/1.2729957

Bonetti, Yargo C.; Graf, Marcel; Hofstetter, Daniel; Carlin, Jean-Francois; Ganiere, Jean-Daniel; Grandjean, Nicolas

2007

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Abstract

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.

Details

Title Modification of InGaN quantum well luminescence by microstructured buffer layers

Author(s) Bonetti, Yargo C. ; Graf, Marcel ; Hofstetter, Daniel ; Carlin, Jean-Francois ; Ganiere, Jean-Daniel ; Grandjean, Nicolas

Published in Physics of Semiconductors, Pts A and B

Series Aip Conference Proceedings, 893

Pages 445-446

Conference 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006

Date 2007

Publisher AIP

Keywords

InGaN; cathodoluminescence; quantum well; nitrides; microstructured surface

DOI https://doi.org/10.1063/1.2729957

Laboratories LASPE

Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published

Record creation date 2010-10-13