000153172 001__ 153172
000153172 005__ 20180913060010.0
000153172 037__ $$aCONF
000153172 245__ $$aSi and Mg doped GaN layers grown by gas source molecular beam epitaxy using ammonia
000153172 269__ $$a1998
000153172 260__ $$bMaterials Research Society$$c1998
000153172 336__ $$aConference Papers
000153172 490__ $$aMaterials Research Society Symposium Proceedings
000153172 520__ $$aThe growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830 degrees C with growth rates larger than 1 mu m/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N-and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg accepters. As-grown GaN:Mg layers exhibit hole concentrations of 3x10(17) cm(-3) and mobilities of 8 cm(2)/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.
000153172 700__ $$aMassies, J.
000153172 700__ $$aLeroux, M.
000153172 700__ $$0244550$$aGrandjean, N.$$g161577
000153172 7112_ $$aSymposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting$$cBOSTON, MA$$dDec 01-05, 1997
000153172 773__ $$j482$$q211-216$$tNitride Semiconductors
000153172 909C0 $$0252312$$pLASPE$$xU10946
000153172 909CO $$ooai:infoscience.tind.io:153172$$pconf$$pSB
000153172 917Z8 $$x173008
000153172 937__ $$aEPFL-CONF-153172
000153172 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000153172 980__ $$aCONF