On the effect of high Mg doping on the polarity of GaN

A study on the effect of high Mg doping on the microstructure of GaN grown on sapphire is presented. The tendency of Mg to induce a change in polarity is demonstrated. In metalorganic vapour phase epitaxy grown films, pyramidal and columnar inversion domains as well as local reversal of polarity are observed. A similar reversal of polarity is also observed in molecular beam epitaxy grown samples. As a consequence, Mg doping may open a way to control the polarity of GaN films and, therefore, to realise heterostructures with alternate polarities.


Published in:
Microscopy Of Semiconducting Materials 2001, 307-310
Presented at:
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, OXFORD, ENGLAND, Mar 25-29, 2001
Year:
2001
Publisher:
AIP
Keywords:
Laboratories:




 Record created 2010-10-13, last modified 2018-03-17


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