AlInN as high-index-contrast material for GaN-based optoelectronics

High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitting diodes with active layers grown on top of AlInN/GaN multi-layers exhibit internal quantum efficiencies comparable to those of reference diodes grown directly on GaN buffer, this further demonstrate that AlInN material quality can meet the needs of optoelectronic application.


Published in:
2003 International Symposium On Compound Semiconductors: Post-Conference Proceedings, 36-41
Presented at:
30th International Symposium on Compound Semiconductors, San Diego, CA, Aug 25-27, 2003
Year:
2004
Publisher:
Ieee
Keywords:
Laboratories:




 Record created 2010-10-13, last modified 2018-03-17


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