Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE
Rudra, A.; Sagalowicz, L.; Berseth, C. A.; Carlin, J. F.; Schoenberg, A.; Jouneau, P. H.; Kapon, E.; Behrend, J.
1997

Abstract

High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99 %, which makes it a challenge for the crystal growth technique. In this paper we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rates that comply with the requirements for the integration in long wavelength VCSELs.

Details

Title Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE
Author(s) Rudra, A. ; Sagalowicz, L. ; Berseth, C. A. ; Carlin, J. F. ; Schoenberg, A. ; Jouneau, P. H. ; Kapon, E. ; Behrend, J.
Published in 1997 International Conference On Indium Phosphide And Related Materials - Conference Proceedings
Pages 428-431
Conference 1997 International Conference on Indium Phosphide and Related Materials (IPRM 97), HYANNIS, MA, May 11-15, 1997
Date 1997
Publisher Ieee
DOI https://doi.org/10.1109/ICIPRM.1997.600185
Other identifier(s) View record in Web of Science
Laboratories CIME
LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2010-10-13

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