Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE

High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99 %, which makes it a challenge for the crystal growth technique. In this paper we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rates that comply with the requirements for the integration in long wavelength VCSELs.


Published in:
1997 International Conference On Indium Phosphide And Related Materials - Conference Proceedings, 428-431
Presented at:
1997 International Conference on Indium Phosphide and Related Materials (IPRM 97), HYANNIS, MA, May 11-15, 1997
Year:
1997
Publisher:
Ieee
Laboratories:




 Record created 2010-10-13, last modified 2018-09-13


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