InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1..55 mu m

We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum wells were integrated in a strain-balanced laser which showed equally good characteristics.

Published in:
1997 International Conference On Indium Phosphide And Related Materials - Conference Proceedings, 563-566
Presented at:
1997 International Conference on Indium Phosphide and Related Materials (IPRM 97), HYANNIS, MA, May 11-15, 1997

 Record created 2010-10-13, last modified 2018-03-17

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