Infoscience

Conference paper

InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1..55 mu m

We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum wells were integrated in a strain-balanced laser which showed equally good characteristics.

    Reference

    • EPFL-CONF-153164

    Record created on 2010-10-13, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material