Characterization of near edge optical transitions in undoped and doped GaN/sapphire grown by MOVPE, HVPE and GSMBE

We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 +/- 10 meV and 34 +/- 2 meV are deduced for Mg accepters and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n(+) layer is evidenced.


Published in:
Iii-V Nitrides, 449, 695-700
Presented at:
Symposium on III-V Nitrides, BOSTON, MA, Dec 02-06, 1996
Year:
1997
Publisher:
Materials Research Society
Laboratories:




 Record created 2010-10-11, last modified 2018-03-17


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