Conference paper

Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy

Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V seed, the vertical growth being stopped by an overhanging capping layer. As an example, conformal GaAs layers on Silicon, presenting dislocation densities below 10(5)cm(-2), have been obtained using selective vapor phase epitaxy. These layers have then been used as high quality GaAs on Si substrates for subsequent vertical MBE regrowth of active structures.

    Keywords: Gaas ; Growth ; Si


    • EPFL-CONF-153133

    Record created on 2010-10-11, modified on 2017-05-12


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