Spectroscopy of intraband electron confinement in self-assembled GaN/AlN quantum dots

We present a detailed analysis of inter- and intraband transitions in GaN/AIN self-organized quantum dots grown on sapphire, silicon (111) and 6H-SiC substrates. Quantum dot samples have been characterized by means of transmission electron microscopy, photoluminescence and photo-induced absorption spectroscopy. Interlevel transitions in the conduction band are observed in the 0.52-0.98 eV energy range, thus covering the telecommunication band. The s-p(z) absorption is peaked at 0.8 eV (0.52 eV) for samples with dot height of 1.5 nm (6 nm). Calculations show that in bigger dots the transition energy is governed by the value of the internal field.


Published in:
Gan And Related Alloys - 2003, 798, 181-185
Presented at:
Symposium on GaN and Related Alloys held at the MRS Fall Meeting, Boston, MA, Dec 01-05, 2003
Year:
2003
Publisher:
Materials Research Society
Keywords:
Laboratories:




 Record created 2010-10-11, last modified 2018-09-13


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