Microscopic description of radiative recombinations in InGaN/GaN quantum systems

Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electric fields and of carrier localization on a nanometer-scale. These two intricate effects imply a separate localization of electrons and holes. Such a microscopic description accounts very well for both the decays shape and the scaling law.

Published in:
Gan And Related Alloys-2002, 743, 343-348
Presented at:
Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, BOSTON, MA, Dec 02-06, 2002
Materials Research Society

 Record created 2010-10-11, last modified 2018-03-17

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