Indium distribution inside quantum wells: The effect of growth interruption in MBE
Ruterana, P.; Kret, S.; Dluzewski, P.; Maciejewski, G.; Grandjean, N.; Damilano, B.; Sanchez, A. M.
2003

Abstract

Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with interruptions during the InxGa1-xN layer growth. The strain distribution is not homogeneous inside the quantum wells, and indium rich clusters can be observed. Areas with almost no indium concentration were observed corresponding to the growth interruption. A comparison with samples grown by metalorganic chemical vapor deposition is attempted.

Details

Title Indium distribution inside quantum wells: The effect of growth interruption in MBE
Author(s) Ruterana, P. ; Kret, S. ; Dluzewski, P. ; Maciejewski, G. ; Grandjean, N. ; Damilano, B. ; Sanchez, A. M.
Published in Gan And Related Alloys-2002
Series Materials Research Society Symposium Proceedings
Volume 743
Pages 393-398
Conference Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, BOSTON, MA, Dec 02-06, 2002
Date 2003
Publisher Materials Research Society
Keywords
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2010-10-11

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